IRKTF81-04HL datasheet(8/8 Pages) IRF

Part #	IRKTF81-04HL

Description	FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

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Manufacturer	IRF [International Rectifier]

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IRK.F82.. Series

8

Bulletin I27103 rev. A 09/97

www.irf.com

Fig. 15 - Gate Characteristics

Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 Hz

400

1000

2500

5000

Pulse Basewidth (µs)

150

Snubber circuit

R

= 22 ohms

C

= 0.15 µF

V

= 80% V

s

D

DRM

IRK.F82.. Series

Trapezoidal Pulse

T

= 90 °C, di/dt 50A/µs

C

tp

1E4 1E11E2

1E31E4

50 Hz

400

1000

2500

5000

Pulse Basewidth (µs)

Snubber circuit

R

= 22 ohms

C

= 0.15 µF

V

= 80% V

s

D

DRM

150

IRK.F 82.. Series

Trapezoidal Pulse

T

= 90 °C, di/dt 100A/µs

C

tp

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

1

0.1

0.01

IRK.F82.. Series

Sinusoidal pulse

0.05

0.25

0.5

2.5

10 joules per pulse

Pulse Basewidth (µs)

tp

5

1E4 1E11E2

1E31E4

1

0.1

Pulse Basewidth (µs)

0.05

0.25

0.5

2.5

5

10 joules per pulse

IRK.F82.. Series

Trapezoidal Pulse

di/dt 50A/µs

tp

1E1

0.1

1

10

100

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(1)

(2)

(3)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse

<=30% rated di/dt : 10 V, 10 ohms

(1) PGM = 10W, tp = 10ms

(2) PGM = 20W, tp = 5ms

(3) PGM = 40W, tp = 2.5ms

IRK.F82.. Series

Frequency Limited by PG(AV)

rated di/dt : 20 V, 10 ohms tr<=1 µs

tr<=1 µs

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