BS616LV4018 datasheet(6/10 Pages) ETC1

Part #	BS616LV4018

Description	Very Low Power/Voltage CMOS SRAM 256K X 16 bit

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6 / 10 page

Revision 2.1

Jan.

2004

6

R0201-BS616LV4018

BSI

BS616LV4018

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL

.

3. Address valid prior to or coincident with CE transition low.

4. OE = VIL

.

5. The parameter is guaranteed but not 100% tested.

t OH

READ CYCLE3 (1,4)

t RC

t OE

D

OUT

LB,UB

CE

OE

ADDRESS

t CLZ

t ACS

t CHZ(1,5)

t OHZ

t OLZ

t AA

READ CYCLE2 (1,3,4)

t CLZ

t CHZ

D

OUT

LB,UB

CE

t BA

t ACS

t BE

t BDO

t BA

t BE

(5)

SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE1 (1,2,4)

t RC

t OH

t AA

D

OUT

ADDRESS

t OH

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