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BS616LV1622TC-70 Datasheet(PDF) 3 Page - Brilliance Semiconductor |
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BS616LV1622TC-70 Datasheet(HTML) 3 Page - Brilliance Semiconductor |
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3 / 10 page  Revision 2.1 Jan. 2004 3 MODE CE1 CE2 OE WE CIO LB UB SAE D0~7 D8~15 VCC Current H X X X Fully Standby X L X X X X X X High-Z High-Z ICCSB, ICCSB1 Output Disable L H H H X X X X High-Z High-Z ICC L H Dout High-Z H L High-Z Dout Read from SRAM ( WORD mode ) L H L H H L L X Dout Dout ICC L H Din X H L X Din Write to SRAM ( WORD mode ) L H X L H L L X Din Din ICC Read from SRAM ( BYTE Mode ) L H L H L X X A-1 Dout High-Z ICC Write to SRAM ( BYTE Mode ) L H X L L X X A-1 Din X ICC TRUTH TABLE BSI BS616LV1626 CIN Input Capacitance VIN=0V 10 pF CDQ Input/Output Capacitance VI/O=0V 12 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C 4.5V ~ 5.5V Industrial -40 O C to +85 O C 4.5V ~ 5.5V ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested. SYMBOL PARAMETER RATING UNITS VTERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V TBIAS Temperature Under Bias -40 to +85 O C TSTG Storage Temperature -60 to +150 O C PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA R0201-BS616LV1626 PARAMETER CONDITIONS MAX. UNIT SYMBOL |
Similar Part No. - BS616LV1622TC-70 |
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Similar Description - BS616LV1622TC-70 |
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