BS616LV1622TIP70 datasheet(4/10 Pages) BSI

Part #	BS616LV1622TIP70

Description	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.1

Jan.

2004

4

DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

BSI

BS616LV1622

R0201-BS616LV1622

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

Vcc=3V

-0.5

--

0.8

VIL

Guaranteed Input Low

Voltage(3)

Vcc=5V

-0.5

--

0.8

V

Vcc=3V

2.0

--

Vcc+0.3

VIH

Guaranteed Input High

Voltage(3)

Vcc=5V

2.2

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH, or CE2 =ViL, or

OE = VIH, VI/O = 0V to Vcc

--

1

uA

Vcc=3V

--

0.4

VOL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=5V

--

0.4

V

Vcc=3V

2.4

--

VOH

Output High Voltage

Vcc = Min, IOH= -1mA

Vcc=5V

2.4

--

V

Vcc=3V

--

37

ICC

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH

, IDQ = 0mA, F = Fmax(2)

Vcc=5V

--

92

mA

Vcc=3V

--

1.3

ICCSB

Standby Current-TTL

CE1 = VIH or CE2 = VIL

, IDQ = 0mA

Vcc=5V

--

2.5

mA

Vcc=3V

--

320

ICCSB1

Standby Current-CMOS

CE1≧Vcc-0.2V, or

LB and UB

V IN ≧ Vcc - 0.2V or VIN ≦ 0.2V

Vcc=5V

--

15

220

uA

(4)

(5)

70ns

1. Typical characteristics are at TA = 25oC.

2. Fmax = 1/t

RC .

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.

5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC.

CE2≦0.2V, or

≧

Vcc - 0.2V

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