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BS62LV4007ECP55 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS62LV4007ECP55
Description  Very Low Power/Voltage CMOS SRAM 512K X 8 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS62LV4007ECP55 Datasheet(HTML) 6 Page - Brilliance Semiconductor

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Revision 1.1
Jan.
2004
6
JEDEC
PARAMETER
NAME
DESCRIPTION
UNIT
t
AVAX
t
WC
Write Cycle Time
55
--
--
70
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
55
--
--
70
--
--
ns
t
AVWL
t
AS
Address Set up Time
0
--
--
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
55
--
--
70
--
--
ns
t
WLWH
t
WP
Write Pulse Width
30
--
--
35
--
--
ns
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
0
--
--
0
--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
--
--
25
--
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
25
--
--
30
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
t
WHQX
t
OW
Endot Write to Output Active
5
--
--
5
--
--
ns
R0201-BS62LV4007
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE
BSI
BS62LV4007
PARAMETER
NAME
MIN.
TYP.
MAX.
(Vcc = 4.5~5.5V)
MIN.
TYP.
MAX.
(Vcc = 4.5~5.5V)
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WR
(3)
t CW
(11)
(2)
t WP
t AW
t OHZ
(4,10)
t AS
t DH
t DW
D
IN
D
OUT
WE
CE
OE
ADDRESS
(5)
t WC
CYCLE TIME : 55ns
CYCLE TIME : 70ns


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