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BS616LV2019TIG55 Datasheet(PDF) 3 Page - Brilliance Semiconductor |
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BS616LV2019TIG55 Datasheet(HTML) 3 Page - Brilliance Semiconductor |
3 / 10 page Revision 1.2 May 2004 3 R0201-BS616LV2019 SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V (3), VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V (3), VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.1 1.0 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform TRC (2) -- -- ns SYMBOL PARAMETER CONDITIONS MAX. UNIT CIN Input Capacitance VIN=0V 6 pF CDQ Input/Output Capacitance VI/O=0V 8 pF RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C2.7V ~ 3.6V Industrial -40 O C to +85 O C2.7V ~ 3.6V 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/t RC. 4. 48B BGA ignore CE2 condition. 5.IccsB1_Max. is 3.0uA at Vcc=3.0V and TA=70oC. 6. Icc_Max. is 23mA(@55ns) / 15mA(@70ns) at Vcc=3.0V/ 0~70oC. DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC ) 1. Vcc = 1.5V, TA = + 25OC 2.t RC = Read Cycle Time 3. 48B BGA ignore CE2 condition. 4. IccDR is 0.7uA at TA=70oC. ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 1. This parameter is guaranteed and not 100% tested. DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC ) BSI BS616LV2019 (4) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VIL Guaranteed Input Low Voltage (2) Vcc =3.0V -0.3 -- 0.8 V VIH Guaranteed Input High Voltage (2) Vcc =3.0V 2.0 -- Vcc+0.3 V IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA ILO Output Leakage Current Vcc = Max,CE = VIH or CE2 (4) = VIL or OE = VIH, VI/O = 0V to Vcc -- -- 1 uA VOL Output Low Voltage Vcc = Max, IOL = 2.0mA Vcc =3.0V -- -- 0.4 V VOH Output High Voltage Vcc = Min, IOH = -1.0mA Vcc =3.0V 2.4 -- -- V 70ns 16 ICC (6) Operating Power Supply Current CE = VIL, CE2 (4) = VIH IDQ = 0mA, F = Fmax (3) 3.0 V 55ns -- -- 25 mA ICCSB Standby Current-TTL CE=VIH or CE2 (4)=VIL IDQ = 0mA Vcc =3.0V -- -- 0.5 mA ICCSB1 (5) Standby Current-CMOS CE≧Vcc-0.2V or CE2(4)≦0.2V, VIN≧Vcc-0.2V or VIN≦0.2V Vcc =3.0V -- 0.3 5.0 uA SYMBOL PARAMETER RATING UNITS V TERM Terminal Voltage with Respect to GND -0.5 to Vcc+0.5 V T BIAS Temperature Under Bias -40 to +85 O C T STG Storage Temperature -60 to +150 O C P T Power Dissipation 1.0 W I OUT DC Output Current 20 mA V cc Power Supply V -0.5 to Vcc+0.5 |
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