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BS616UV4016AC-85 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616UV4016AC-85
Description  Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616UV4016AC-85 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BSI
BS616UV4016
5
R0201-BS616UV4016
Revision
1.3
Sep.
2005
n AC ELECTRICAL CHARACTERISTICS (T
A = -40
OC to +85OC)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
CYCLE TIME : 85ns
(VCC=1.9~3.6V)
MIN.
TYP.
MAX.
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
85
--
--
100
--
--
ns
tAVQX
tAA
Address Access Time
--
--
85
--
--
100
ns
tELQV
tACS
Chip Select Access Time
(CE)
--
--
85
--
--
100
ns
tBLQV
tBA
(1)
Data Byte Control Access Time
(LB, UB)
--
--
40
--
--
50
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
40
--
--
50
ns
tELQX
tCLZ
Chip Select to Output Low Z
(CE)
15
--
--
15
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
15
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
15
--
--
15
--
--
ns
tEHQZ
tCHZ
Chip Select to Output High Z
(CE)
--
--
35
--
--
40
ns
tBHQZ
tBDO
Data Byte Control to Output High Z
(LB, UB)
--
--
35
--
--
40
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
35
--
--
40
ns
tAVQX
tOH
Data Hold from Address Change
15
--
--
15
--
--
ns
NOTE :
1. tBA is 40ns/50ns(@speed=85ns/100ns) with address toggle; tBA is 85ns/100ns(@speed=85ns/100ns) without address toggle
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
READ CYCLE 2
(1,3,4)
tRC
tOH
tAA
DOUT
ADDRESS
tOH
tCLZ
(5)
tCHZ
(5)
DOUT
LB, UB
CE
tBA
tACS
tBE
tBDO


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