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BS616UV2019DCG85 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616UV2019DCG85 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
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1 / 9 page  Revision 1.1 Jan. 2004 1 R0201-BS616UV2019 Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V (Vcc_min.=1.65V at 25oC) • Ultra low power consumption : Vcc = 2.0V C-grade: 8mA (Max.) operating current I -grade: 10mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 11mA (Max.) operating current I -grade: 13mA (Max.) operating current 0.30uA (Typ.) CMOS standby current • High speed access time : -85 85ns (Max.) -10 100ns (Max.) • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.2uA at 2.0V /25oC and maximum access time of 85ns at 85oC. Easy memory expansion is provided by active LOW chip enable (CE), active LOW output enable(OE) and three-state output drivers. The BS616UV2019 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV2019 is available in DICE form, JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. DESCRIPTION FEATURES BLOCK DIAGRAM PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. BS616UV2019 48-ball BGA top view SPEED ( ns ) STANDBY ( ICCSB1, Max ) Operating ( ICC, Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE C-grade:1.8~3.6V Vcc=3.0V Vcc=3.0V PKG TYPE BS616UV2019DC DICE BS616UV2019TC TSOP1-48 BS616UV2019AC +0 O C to +70 O C 1.8V ~3.6V 85/100 3.0uA 11mA BGA-48-0608 BS616UV2019DI DICE BS616UV2019TI TSOP1-48 BS616UV2019AI -40 O C to +85 O C 1.9V ~ 3.6V 85/100 5.0uA 13mA BGA-48-0608 BSI Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Buffer Input Control Gnd Vcc OE WE CE2,CE DQ15 DQ0 A16 A5 A6 A7 A15 A13 16 16 16 16 14 128 2048 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB G H F E D C B A 12345 6 D15 D14 VSS D9 D8 LB VCC N.C. A8 A9 D13 A12 A14 D12 D11 D10 A5 UB OE A3 A0 A11 A10 A13 A15 WE D5 A16 A7 A6 D4 D3 D1 D7 D6 D2 A4 A1 A2 D0 N.C. VSS VCC N.C. CE N.C. N.C. N.C. 24 25 1 48 A15 A14 A13 A12 A11 A10 A9 A8 NC NC /WE CE2 NC /UB /LB NC NC A7 A6 A5 A4 A3 A2 A1 9 10 13 16 17 A16 NC VSS IO15 IO7 IO14 IO6 IO13 IO5 IO12 IO4 VCC IO11 IO3 IO10 IO2 IO9 IO1 IO8 IO0 /OE VSS /CE A0 47 BS616UV2019TC BS616UV2019TI 37 27 46 Vcc=2.0V Vcc=2.0V 2.0uA 3.0uA 8mA 10mA • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin • Data retention supply voltage as low as 1.0V I-grade:1.9~3.6V POWER DISSIPATION |
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