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Die Characteristics

DIE DIMENSIONS:

3559

µm x 4420µm (129 mils x 174 mils)

Thickness: 483

µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS

Glassivation

Type: Phosphorus Silicon Glass (PSG)

Thickness: 8.0kÅ

± 1.0kÅ

Top Metallization

Type: AlSiCu

Thickness: 16.0kÅ

± 2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density:

Transistor Count:

222

Metallization Mask Layout

IS-1715ARH

NOTES:

1. All double sized pads should be double bonded.

2. All pin 2 and pin 10 VCC pads are bonded to VCC for power and

noise considerations. (These are lead-frame connected in

packaged devices.)

INPUT (14)

T1 (15)

ENBL (16)

PWR (3)

(11) T2

(6) AUX

IS-1715ARH