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SUD50N03-10CP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD50N03-10CP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUD50N03-10CP Vishay Siliconix New Product www.vishay.com 2 Document Number: 71791 S-05485—Rev. B, 21-Jan-02 MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 250 mA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C 50 mA DSS VDS = 24 V, VGS = 0 V, TJ = 175_C 150 m On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 15 A 0.008 0.010 VGS = 10 V, ID = 15 A, TJ = 125_C 0.016 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C 0.020 W VGS = 4.5 V, ID = 15 A 0.0105 0.012 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 60 S Dynamicb Input Capacitance Ciss 1725 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 425 pF Reversen Transfer Capacitance Crss 120 Total Gate Chargec Qg 13 18 Gate-Source Chargec Qgs VDS = 15 V, VGS = 4.5 V, ID = 15 A 4.5 nC Gate-Drain Chargec Qgd DS GS D 4.0 Gate Resistance RG 1.7 W Turn-On Delay Timec td(on) 10 15 Rise Timec tr VDD = 15 V, RL = 1 W 160 240 Turn-Off Delay Timec td(off) VDD = 15 V, RL = 1 W ID ] 15 A, VGEN = 10 V, RG = 6 W 30 45 ns Fall Timec tf D GEN G 55 85 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 15 Pulsed Current ISM 100 A Forward Voltagea VSD IF = 15 A, VGS = 0 V 0.85 12 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/ms 80 110 ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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