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KMM5322200C2WG Datasheet(PDF) 6 Page - Samsung semiconductor |
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KMM5322200C2WG Datasheet(HTML) 6 Page - Samsung semiconductor |
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6 / 17 page  DRAM MODULE KMM5322200C2W/C2WG Rev. 0.0 (Nov. 1997) - 6 - CAPACITANCE (TA = 25 °C, VCC=5V, f = 1MHz) Item Symbol Min Max Unit Input capacitance[A0-A9] Input capacitance[ W] Input capacitance[ RAS0 , RAS1] Input capacitance[ CAS0 - CAS3] Input/Output capacitance[DQ0-31] CIN1 CIN2 CIN3 CIN4 CDQ - - - - - 35 45 40 30 30 pF pF pF pF pF Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, Output loading CL=100pF Parameter Symbol -5 -6 Unit Note Min Max Min Max Random read or write cycle time tRC 90 110 ns Access time from RAS tRAC 50 60 ns 3,4 Access time from CAS tCAC 13 15 ns 3,4,5 Access time from column address tAA 25 30 ns 3,10 CAS to output in Low-Z tCLZ 0 0 ns 3 Output buffer turn-off delay tOFF 0 15 0 15 ns 6 Transition time(rise and fall) tT 3 50 3 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 13 15 ns CAS hold time tCSH 50 60 ns CAS pulse width tCAS 13 10K 15 10K ns RAS to CAS delay time tRCD 20 37 20 45 ns 4 RAS to column address delay time tRAD 15 25 15 30 ns 10 CAS to RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns Column address hold time tCAH 10 10 ns Column address to RAS lead time tRAL 25 30 ns Read command set-up time tRCS 0 0 ns Read command hold referenced to CAS tRCH 0 0 ns 8 Read command hold referenced to RAS tRRH 0 0 ns 8 Write command hold time tWCH 10 10 ns Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 13 15 ns Write command to CAS lead time tCWL 13 15 ns Data-in set-up time tDS 0 0 ns 9 Data-in hold time tDH 10 10 ns 9 Refresh period tREF 16 16 ms Write command set-up time tWCS 0 0 ns 7 CAS setup time( CAS-before- RAS refresh) tCSR 5 5 ns CAS hold time( CAS-before- RAS refresh) tCHR 10 10 ns RAS precharge to CAS hold time tRPC 5 5 ns Access time from CAS precharge tCPA 30 35 ns 3 AC CHARACTERISTICS (0 °C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.) |
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