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LC12A Datasheet(PDF) 1 Page - Microsemi Corporation

Part # LC12A
Description  1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

LC12A Datasheet(HTML) 1 Page - Microsemi Corporation

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1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSD A L E DIVISION
LC6.5 thru LC170A
DESCRIPTION
APPEARANCE
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in
inductive switching environments or electrical systems involving secondary
lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for
airborne avionics. With virtually instantaneous response, they also protect from
ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
If bipolar transient
capability is required, two of these low capacitance TVS devices may be used in
parallel in opposite directions (anti-parallel) for complete ac protection as shown
in Figure 6.
DO-13
(DO-202AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
• Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
• Clamps transient in less than 100 pico seconds
• Working voltage (VWM) range 6.5 V to 170 V
• Hermetic sealed DO-13 metal package
• Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
• Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult
factory for other surface mount options)
• Plastic axial-leaded equivalents available in the
LCE6.5 - LCE170A series in separate data sheet
• Protection from switching transients and induced RF
• Protection for aircraft fast data rate lines per select
level waveforms in RTCA/DO-160D & ARINC 429
• ESD & EFT protection per IEC 61000-4-2 and -4-4
• Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: LC6.5 to LC170A
Class 2: LC6.5 to LC150A
Class 3: LC6.5 to LC70A
Class 4: LC6.5 to LC36A
• Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : LC6.5 to LC90A
Class 2: LC6.5 to LC45 A
Class 3: LC6.5 to LC22A
Class 4: LC6.5 to LC11A
• Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
• Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• 1500 Watts at 10/1000 µs with repetition rate of 0.01% or
less*
at lead temperature (TL) 25
oC (see Figs. 1, 2, & 4)
• Operating & Storage Temperatures: -65o to +175oC
• THERMAL RESISTANCE: 50oC/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110
oC/W
junction to ambient when mounted on FR4 PC board
with 4 mm
2 copper pads (1 oz) and track width 1 mm,
length 25 mm
• DC Power Dissipation
*: 1 Watt at TL < +125oC 3/8” (10
mm) from body (see derating in Fig 3 and note below)
• Solder Temperatures: 260 o C for 10 s (maximum)
• CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
• FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
• POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
• MARKING: Part number and polarity diode symbol
• WEIGHT: 1.4 grams. (Approx)
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
• See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
 2002
10-21-2004 REV C


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