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KM732V596A Datasheet(PDF) 9 Page - Samsung semiconductor |
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KM732V596A Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 16 page PRELIMINARY Rev 1.0 KM732V596A/L 32Kx32 Synchronous SRAM - 9 - May 1997 AC TIMING CHARACTERISTICS NOTE : 1. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP is sampled low and CS is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 2. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled. 3. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state. Parameter Symbol KM732V596A-13 KM732V596A-15 Unit Min Max Min Max Cycle Time tCYC 13 - 15 - ns Clock Access Time tCD - 7.0 - 8.0 ns Output Enable to Data Valid tOE - 6.0 - 7.0 ns Clock High to Output Low-Z tLZC 0 - 0 - ns Output Hold from Clock High tOH 2.5 - 2.5 - ns Output Enable Low to Output Low-Z tLZOE 0 - 0 - ns Output Enable High to Output High-Z tHZOE - 4.0 - 4.0 ns Clock High to Output High-Z tHZC 1.5 5.0 2.0 6.0 ns Clock High Pulse Width tCH 4.5 - 6.0 - ns Clock Low Pulse Width tCL 4.5 - 6.0 - ns Address Setup to Clock High tAS 2.5 - 2.5 - ns Address Status Setup to Clock High tSS 2.5 - 2.5 - ns Data Setup to Clock High tDS 2.5 - 2.5 - ns Write Setup to Clock High(GW, BW, WEx) tWS 2.5 - 2.5 - ns Address Advance Setup to Clock High tADVS 2.5 - 2.5 - ns Chip Select Setup to Clock High tCSS 2.5 - 2.5 - ns Address Hold from Clock High tAH 0.5 - 0.5 - ns Address Status Hold from Clock High tSH 0.5 - 0.5 - ns Data Hold from Clock High tDH 0.5 - 0.5 - ns Write Hold from Clock High(GW, BW, WEx) tWH 0.5 - 0.5 - ns Address Advance Hold from Clock High tADVH 0.5 - 0.5 - ns Chip Select Hold from Clock High tCSH 0.5 - 0.5 - ns ZZ High to Power Down tPDS 2 - 2 - cycle ZZ Low to Power Up tPUS 2 - 2 - cycle (VDD=3.3V-5%/+10%, VDDQ=3.3V-5%/+10%, or VDD=3.3V ±5%, VDDQ=2.5V+0.4V/-0.13V, TA=0 to 70°C) |
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