OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089B High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
CG
TISP61089B gate decoupling capacitor
100
220
nF
RS
TISP61089B series resistor for GR-1089-CORE first-level surge survival
25
Ω
TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival
40
Ω
TISP61089B series resistor for GR-1089-CORE intra-building port surge survival
8
Ω
TISP61089B series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
10
Ω
Parameter
Test Conditions
Min
Typ
Max
Unit
ID
Off-state current
VD =VDRM, VGK =0
TJ = 25 °C-5
µA
TJ = 85 °C-50
µA
V(BO)
Breakover voltage2/10 µs, ITM =-100 A, di/dt = -80 A/µs, RS =50 Ω, VGG =-100 V
-112
V
VGK(BO)
Gate-cathode impulse
breakover voltage
2/10 µs, ITM =-100 A, di/dt = -80 A/µs, RS =50 Ω, VGG = -100 V,
(see Note 4)
12
V
VF
Forward voltage
IF =5 A, tw = 200 µs3
V
VFRM
Peak forward recovery
voltage
2/10 µs, IF = 100 A, di/dt = 80 A/µs, RS =50 Ω, (see Note 4)
10
V
IH
Holding current
I T =-1 A, di/dt = 1A/ms, VGG =-100 V
-150
mA
IGKS
Gate reverse current
VGG =VGK =VGKRM, VKA =0
TJ = 25 °C-5
µA
TJ = 85 °C-50
µA
IGT
Gate trigger current
IT =-3 A, tp(g) ≥ 20 µs, VGG =-100 V
5
mA
VGT
Gate-cathode trigger
voltage
IT =-3 A, tp(g) ≥ 20 µs, VGG =-100 V
2.5
V
CKA
Cathode-anode off-
state capacitance
f= 1 MHz, Vd =1V, IG =0, (see Note 5)
VD =-3 V
100
pF
VD =-48 V
50
pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
voltage value (VGG).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
RθJA
Junction to free air thermal resistance
TA = 25 °C, EIA/JESD51-3 PCB, EIA/
JESD51-2 environment, PTOT = 1.7 W
120
°C/W
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