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CS62LS4008FC Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. CS62LS4008FC
Description  Low Power CMOS SRAM 512K X 8 Bits
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Maker  ETC1 [List of Unclassifed Manufacturers]
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Low Power CMOS SRAM
512K X 8 Bits
UC62LS4008
-20/-25
DC ELECTRICAL CHARACTERISTICS (TA=0℃ to 70℃)
Symbol
Comment
Test Condition
MIN.
TYP.
(1)
MAX.
UNITS
VIL
Guaranteed Input Low
Voltage
(2)
VCC=2.4V
-0.5
-
0.8
V
VIH
Guaranteed Input High
Voltage
(2)
VCC=3.6V
2.0
-
Vcc-0.2
V
IL
Input Leakage Current
VCC=3.6V VIN=0V to VCC
-
-
1
uA
IOL
Output Leakage Current
VCC=3.6V CE\=VIH or OE\=VIH
VIO=0V t VCC
-
-
1
uA
VOL
Output Low Voltage
VCC=3.6V, IOL=2mA
-
-
0.4
V
VOH
Output High Voltage
VCC=3.0V, IOH=-1mA
2.4
-
-
V
ICC
Operating Power Supply
Current
CE\=VIL,IDQ=0mA, F=Fmax
(3)
-
-
20
mA
ISB1
TTL Standby Current
CE\=VIH, VIN=VIH to VIL
-
-
1
mA
ISB2
CMOS Standby Current
CE\≧VCC-0.2V, VIN=VCC-0.2V
to 0.2V
-
2
10
uA
1. Typical characteristics are at TA = 25
oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA=0℃ to 70℃)
Symbol
Comment
Test Condition
MIN.
TYP.
(1)
MAX.
UNITS
VDR
VCC to Data Retention
CE\≧VCC - 0.2V
VIN≧VCC-0.2V or VIN≦0.2V
1.2
-
-
V
ICCDR
Data Retention Current
CE\≧VCC - 0.2V
VIN≧VCC-0.2V or VIN≦0.2V
-
0.1
1
uA
tDR
Chip Deselect to Data
Retention Time
0
-
-
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
-
-
ns
1.
VCC = 1.5V, TA = 25℃.
2.
tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM
(1) (CE\ Controlled)
Data Retention Mode
V
DR >= 1. 2V
t
CDR
t
R
VIH
VIH
CE >= V
CC - 0. 2V
Vcc
CE
U-Chip Technology Corp. LTD.
.
Preliminary
Rev.1.0
Reserves the right to modify document contents without notice.
PAGE
3




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