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28LV010RT2DS20 Datasheet(PDF) 1 Page - Maxwell Technologies |
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28LV010RT2DS20 Datasheet(HTML) 1 Page - Maxwell Technologies |
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1 / 20 page  1 All data sheets are subject to change without notice (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com 3.3V 1 Megabit (128K x 8-Bit) 28LV010 ©2001 Maxwell Technologies All rights reserved. EEPROM 03.14.03 REV 6 FEATURES: • 3.3V low voltage operation 128K x 8 Bit EEPROM •RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single Event Effects: -SEL TH > 84 MeV/mg/cm 2 -SEU TH > 37 Mev/mg/cm 2 (read mode) - SEU saturated cross section = 3E-6 cm2 (read mode) -SEU TH = 11.4 Mev/mg/cm 2 (write mode) - SEU saturated cross section = 5E-3 cm2 (write mode) with hard errors • Package: -32 Pin RAD-PAK® flat pack -32 Pin RAD-PAK®DIP - JEDEC-approved byte-wide pinout • Address Access Time: - 200, 250 ns maximum access times available • High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention • Page write mode: - 1 to 128 bytes • Automatic programming - 10 ms automatic page/byte write • Low power dissipation - 20mW/MHzactivecurrent (typ.) - 72 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page pro- grammability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the comple- tion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES pin, in addi- tion to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented RAD-PAK® packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. High Voltage Generator Control Logic Timing Address Buffer and Latch Y Decoder X Decoder YGating Memory Array I/O Buffer and Input Latch Data Latch V CC V SS RES OE CE WE RES A0 A6 A7 A16 I/O0 I/O7 RDY/Busy Logic Diagram |
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