Electronic Components Datasheet Search |
|
EBD11ED8ADFB-5C Datasheet(PDF) 11 Page - Elpida Memory |
|
EBD11ED8ADFB-5C Datasheet(HTML) 11 Page - Elpida Memory |
11 / 19 page EBD11ED8ADFB-5 Data Sheet E0408E30 (Ver. 3.0) 11 DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.6V ± 0.1V, VSS = 0V) Parameter Symbol Grade max. Unit Test condition Notes Operating current (ACTV-PRE) IDD0 -5B -5C 2205 2070 mA CKE ≥ VIH, tRC = tRC (min.) 1, 2, 9 Operating current (ACTV-READ-PRE) IDD1 -5B -5C 2655 2520 mA CKE ≥ VIH, BL = 4, CL = 3, tRC = tRC (min.) 1, 2, 5 Idle power down standby current IDD2P 54 mA CKE ≤ VIL 4 Floating idle standby current IDD2F 630 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 5 Quiet idle standby current IDD2Q 360 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 10 Active power down standby current IDD3P 540 mA CKE ≤ VIL 3 Active standby current IDD3N 1260 mA CKE ≥ VIH, /CS ≥ VIH tRAS = tRAS (max.) 3, 5, 6 Operating current (Burst read operation) IDD4R 3240 mA CKE ≥ VIH, BL = 2, CL = 3 1, 2, 5, 6 Operating current (Burst write operation) IDD4W 3240 mA CKE ≥ VIH, BL = 2, CL = 3 1, 2, 5, 6 Auto refresh current IDD5 5940 mA tRFC = tRFC (min.), Input ≤ VIL or ≥ VIH Self refresh current IDD6 72 mA Input ≥ VDD – 0.2 V Input ≤ 0.2 V Operating current (4 banks interleaving) IDD7A -5B -5C 5670 5400 mA BL = 4 1, 5, 6, 7 Notes. 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one cycle. 6. DQ, DM and DQS transition twice per one clock cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once every two clock cycles. 10. Command/Address stable at ≥ VIH or ≤ VIL. DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.6V ± 0.1V, VSS = 0V) Parameter Symbol min. max. Unit Test condition Note Input leakage current ILI –36 36 µA VDD ≥ VIN ≥ VSS Output leakage current ILO –10 10 µA VDD ≥ VOUT ≥ VSS Output high current IOH –15.2 — mA VOUT = 1.95V 1 Output low current IOL 15.2 — mA VOUT = 0.35V 1 Note: 1. DDR SDRAM component specification. Pin Capacitance (TA = 25°C, VDD = 2.6V ± 0.1V) Parameter Symbol Pins max. Unit Note Input capacitance CI1 Address, /RAS, /CAS, /WE, /CS, CKE 60 pF Input capacitance CI2 CK, /CK 50 pF Data and DQS input/output capacitance CO DQ, DQS, CB 20 pF |
Similar Part No. - EBD11ED8ADFB-5C |
|
Similar Description - EBD11ED8ADFB-5C |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |