EBD11ED8ADFB-5

Data Sheet E0408E30 (Ver. 3.0)

11

DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.6V ± 0.1V, VSS = 0V)

Parameter

Symbol

Grade

max.

Unit

Test condition

Notes

Operating current (ACTV-PRE)

IDD0

-5B

-5C

2205

2070

mA

CKE ≥ VIH,

tRC = tRC (min.)

1, 2, 9

Operating current

(ACTV-READ-PRE)

IDD1

-5B

-5C

2655

2520

mA

CKE ≥ VIH, BL = 4,

CL = 3,

tRC = tRC (min.)

1, 2, 5

Idle power down standby current

IDD2P

54

mA

CKE ≤ VIL

4

Floating idle standby current

IDD2F

630

mA

CKE ≥ VIH, /CS ≥ VIH

DQ, DQS, DM = VREF

4, 5

Quiet idle standby current

IDD2Q

360

mA

CKE ≥ VIH, /CS ≥ VIH

DQ, DQS, DM = VREF

4, 10

Active power down

standby current

IDD3P

540

mA

CKE ≤ VIL

3

Active standby current

IDD3N

1260

mA

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

3, 5, 6

Operating current

(Burst read operation)

IDD4R

3240

mA

CKE ≥ VIH, BL = 2,

CL = 3

1, 2, 5, 6

Operating current

(Burst write operation)

IDD4W

3240

mA

CKE ≥ VIH, BL = 2,

CL = 3

1, 2, 5, 6

Auto refresh current

IDD5

5940

mA

tRFC = tRFC (min.),

Input ≤ VIL or ≥ VIH

Self refresh current

IDD6

72

mA

Input ≥ VDD – 0.2 V

Input ≤ 0.2 V

Operating current

(4 banks interleaving)

IDD7A

-5B

-5C

5670

5400

mA

BL = 4

1, 5, 6, 7

Notes. 1. These IDD data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one cycle.

6. DQ, DM and DQS transition twice per one clock cycle.

7. 4 banks active. Only one bank is running at tRC = tRC (min.)

8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.

9. Command/Address transition once every two clock cycles.

10. Command/Address stable at ≥ VIH or ≤ VIL.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.6V ± 0.1V, VSS = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Note

Input leakage current

ILI

–36

36

µA

VDD ≥ VIN ≥ VSS

Output leakage current

ILO

–10

10

µA

VDD ≥ VOUT ≥ VSS

Output high current

IOH

–15.2

—

mA

VOUT = 1.95V

1

Output low current

IOL

15.2

—

mA

VOUT = 0.35V

1

Note: 1. DDR SDRAM component specification.

Pin Capacitance (TA = 25°C, VDD = 2.6V ± 0.1V)

Parameter

Symbol

Pins

max.

Unit

Note

Input capacitance

CI1

Address, /RAS, /CAS, /WE,

/CS, CKE

60

pF

Input capacitance

CI2

CK, /CK

50

pF

Data and DQS input/output

capacitance

CO

DQ, DQS, CB

20

pF