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EBE51RD8ABFA-5C-E Datasheet(PDF) 1 Page - Elpida Memory

Part # EBE51RD8ABFA-5C-E
Description  512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EBE51RD8ABFA-5C-E Datasheet(HTML) 1 Page - Elpida Memory

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Document No. E0402E40 (Ver. 4.0)
Date Published July 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2004
DATA SHEET
512MB Registered DDR2 SDRAM DIMM
EBE51RD8ABFA (64M words
×××× 72 bits, 1 Rank)
Description
The EBE51RD8ABFA is a 64M words
× 72 bits, 1 rank
DDR2 SDRAM Module, mounting 9 pieces of DDR2
SDRAM sealed in FBGA (
µBGA) package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 4bits prefetch-pipelined architecture.
Data strobe (DQS and /DQS) both for read and write
are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
This module provides high density mounting without
utilizing
surface
mount
technology.
Decoupling
capacitors are mounted beside each FBGA (
µBGA) on
the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
• 240-pin socket type dual in line memory module
(DIMM)
 PCB height: 30.0mm
 Lead pitch: 1.0mm
 Lead-free
• 1.8V power supply
• Data rate: 533Mbps/400Mbps (max.)
• 1.8 V (SSTL_18 compatible) I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Four internal banks for concurrent operation
(Component)
• Data mask (DM) for write data
• Burst length: 4, 8
• /CAS latency (CL): 3, 4, 5
• Auto precharge option for each burst access
• Auto refresh and self refresh modes
• 7.8µs average periodic refresh interval
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
• 1 piece of PLL clock driver, 1 pieces of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)


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