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XN4502 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XN4502 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Publication date: August 2003 SJJ00076BED Composite Transistors XN04502 (XN4502) Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • 2SD0602A (2SD602A) × 2 ■ Absolute Maximum Ratings T a = 25°C Unit: mm Internal Connection Marking Symbol: 5Q Tr2 Tr1 5 4 3 2 1 6 Note) The part number in the parenthesis shows conventional part number. ■ Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5V Collector current IC 0.5 A Peak collector current ICP 1A Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, I B = 050 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio hFE1 VCE = 10 V, I C = 150 mA 85 340 hFE2 * VCE = 10 V, IC = 500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V Transition frequency fT VCB = 10 V, I E = −50 mA, f = 200 MHz 200 MHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 6 15 pF (Common base, input open circuited) 1: Collector (Tr1) 4: Collector (Tr2) 2: Base (Tr2) 5: Base (Tr1) 3: Emitter (Tr2) 6: Emitter (Tr1) EIAJ : SC-74 Mini6-G1 Package 2.90 1.9±0.1 0.16 +0.10 –0.06 (0.95) 0.30 +0.10 –0.05 0.50 +0.10 –0.05 (0.95) 6 5 4 1 32 +0.20 –0.05 10˚ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement |
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