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H01N45A Datasheet(PDF) 2 Page - Hi-Sincerity Mocroelectronics

Part # H01N45A
Description  N-Channel Power Field Effect Transistor
Download  4 Pages
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Manufacturer  HSMC [Hi-Sincerity Mocroelectronics]
Direct Link  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H01N45A Datasheet(HTML) 2 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
H01N45A
HSMC Product Specification
Electrical Characteristics (T
case=25°C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
ON/OFF
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS=0V, ID=250uA
450
-
-
V
V
DS=Max. Rating
-
-
1
I
DSS
Zero Gate Voltage Drain Current
(V
GS=0)
V
DS=Max. Rating, TC=125
oC-
-
50
uA
I
GSS
Gate-Body Leakage Current
(V
DS=0)
V
GS=±30V
--
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS, ID=250uA
2.3
3
3.7
V
R
DS(on)
Static Drain-Source On Resistance
V
GS=10V, ID=0.5A
-
4.1
4.5
Dynamic
g
FS
*1
Forward Transconductance
V
DS≥ID(on)xRDS(on)max., ID=0.5A
-1.1
-
S
C
iss
Input Capacitance
-
185
230
C
oss
Output Capacitance
-
27.5
-
C
rss
Reverse Transfer Capacitance
V
DS=25V, VGS=0V, f=1MHz
-6
10
pF
Switching On
t
d(on)
Turn-on Delay Time
-
6.7
-
t
r
Rise Time
(V
DD=225V, ID=0.5A, RG=4.7Ω,
V
GS=10V)
-4
-
ns
Q
g
Total Gate Charge
-
14
20
Q
gs
Gate-Source Charge
-
2
-
Q
gd
Gate-Drain Charge
(V
DS=360V, ID=0.5A, VGS=10V,
R
G=4.7Ω)
-3.2
-
nC
Switching Off
t
r(Voff)
Off-Voltage Rise Time
-
8.5
-
t
f
Fall Time
-
12
-
t
C
Cross-Over Time
(V
DD=360V, ID=1.5A, RG=4.7Ω,
V
GS=10V)
-18
-
ns
Source Drain Diode
I
SD
Source-Drain Current
-
-
1.5
I
SDM
*2
Source-Drain Current (pulsed)
-
-
6
A
V
SD
*1
Forward On Voltage
I
SD=1.5A, VGS=0
-
-
1.6
V
t
rr
Reverse Recovery Time
I
SD=1.5A, di/dt=100A/us
-
225
-
ns
Q
rr
Reverse Recovery Charge
V
DD=100V, TJ=150oC
-
530
-
uC
I
RRM
Reverse Recovery Current
-
4.7
-
A
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.


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