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H01N45A Datasheet(PDF) 2 Page - Hi-Sincerity Mocroelectronics |
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H01N45A Datasheet(HTML) 2 Page - Hi-Sincerity Mocroelectronics |
2 / 4 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 2/4 H01N45A HSMC Product Specification Electrical Characteristics (T case=25°C, unless otherwise specified) Symbol Characteristic Test Conditions Min. Typ. Max. Unit ON/OFF V (BR)DSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 450 - - V V DS=Max. Rating - - 1 I DSS Zero Gate Voltage Drain Current (V GS=0) V DS=Max. Rating, TC=125 oC- - 50 uA I GSS Gate-Body Leakage Current (V DS=0) V GS=±30V -- ±100 nA V GS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2.3 3 3.7 V R DS(on) Static Drain-Source On Resistance V GS=10V, ID=0.5A - 4.1 4.5 Ω Dynamic g FS *1 Forward Transconductance V DS≥ID(on)xRDS(on)max., ID=0.5A -1.1 - S C iss Input Capacitance - 185 230 C oss Output Capacitance - 27.5 - C rss Reverse Transfer Capacitance V DS=25V, VGS=0V, f=1MHz -6 10 pF Switching On t d(on) Turn-on Delay Time - 6.7 - t r Rise Time (V DD=225V, ID=0.5A, RG=4.7Ω, V GS=10V) -4 - ns Q g Total Gate Charge - 14 20 Q gs Gate-Source Charge - 2 - Q gd Gate-Drain Charge (V DS=360V, ID=0.5A, VGS=10V, R G=4.7Ω) -3.2 - nC Switching Off t r(Voff) Off-Voltage Rise Time - 8.5 - t f Fall Time - 12 - t C Cross-Over Time (V DD=360V, ID=1.5A, RG=4.7Ω, V GS=10V) -18 - ns Source Drain Diode I SD Source-Drain Current - - 1.5 I SDM *2 Source-Drain Current (pulsed) - - 6 A V SD *1 Forward On Voltage I SD=1.5A, VGS=0 - - 1.6 V t rr Reverse Recovery Time I SD=1.5A, di/dt=100A/us - 225 - ns Q rr Reverse Recovery Charge V DD=100V, TJ=150oC - 530 - uC I RRM Reverse Recovery Current - 4.7 - A *1: Pulse Test: Pulse duration=300us, duty cycle 1.5% *2: Pulse width limited by safe operating area. |
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