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M5M5256DRV-15VLL Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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M5M5256DRV-15VLL Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 7 page  MITSUBISHI LSIs 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM MITSUBISHI ELECTRIC M5M5256DFP,VP,RV -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL '97.4.7 4 (2) READ CYCLE (3) WRITE CYCLE Symbol Parameter tCR Read cycle time Address access time Unit ns ns ns ns ns ns ns ns ns Limits ta(S) ta(OE) tdis(S) tdis(OE) ten(S) ten(OE) tV(A) ta(A) -15VLL, VXL AC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, Vcc=2.7~3.6V, unless otherwise noted ) (1) MEASUREMENT CONDITIONS Chip select access time Output enable access time Output disable time after /S high Output disable time after /OE high Output enable time after /S low Output enable time after /OE low Data valid time after address Max Min Input pulse level···················VIH=2.2V,VIL=0.4V Input rise and fall time··········5ns Reference level····················VOH=VOL=1.5V Output loads·························Fig.1,CL=30pF (-10VLL,-10VXL ) CL=50pF (-12VLL,-12VXL ) CL=100pF (-15VLL,-15VXL ) CL=5pF (for ten,tdis) Transition is measured ±500mV from steady state voltage. (for ten,tdis) 120 10 10 10 Min 120 120 60 35 35 Max 100 10 10 10 Min 100 100 50 30 30 Max -10VLL, VXL -12VLL, VXL 150 10 10 10 150 150 75 40 40 Symbol Parameter Unit ns ns ns ns ns ns ns ns ns ns ns ns Limits Write cycle time Write pulse width Address setup time Address setup time with respect to /W high Chip select setup time Data setup time Data hold time Write recovery time Output disable time from /W low Output disable time from /OE high Output enable time from /W high Output enable time from /OE low Max Min -15VLL, VXL -10VLL, VXL -12VLL, VXL 35 35 Max 120 80 0 90 90 45 0 0 10 10 Min 30 30 Max 100 70 0 80 80 40 0 0 10 10 Min tCW tw(W) tsu(A) tsu(A-WH) tsu(S) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE) 40 40 150 90 0 100 100 50 0 0 10 10 Fig.1 Output load (Including scope and JIG) DQ L C |
Similar Part No. - M5M5256DRV-15VLL |
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