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E35A23VS Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part # E35A23VS
Description  STACK SILICON DIFFUSED DIODE
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

E35A23VS Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2001. 2. 8
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VS
E35A23VR
(+ Type)
(- Type)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A1
A2
A3
B1
D3
D2
B2
C1
C2
D1
2.0 0.3
1.9 0.3
8.5 0.3
E
10.0 0.3
13.5 0.3
24.0 0.5
10.0 0.3
5.0 0.3
2.5 0.3
5.0 0.3
4.5 0.3
9.0 0.3
1.0 0.3
4.4 0.5
0.6 0.3
DIM
MILLIMETERS
F
G
H
T
A3
A2
A1
D3
EF
G
MR
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=100A
-
-
1.05
V
Zener Voltage
VZ
IZ=10mA
20
23
26
V
Repetitive Peak Reverse Curren
IRRM
VR=VRM
-
-
10
A
Transient Thermal Resistance
IRRM
IFM=100A, Pw=100mS
-
-
90
mV
Reverse Leakage Current Under
High Temperature
HIR
Ta=150 , VR=VRM
-
-
2.5
mA
Reverse recovery Time
Trr
IF=100mA, -IR=100mA
90% Recovery Point
-
-
5.0
S
Temperature Resistance
Rth
DC total junction to case
-
-
1.0
/W
Thermal runway Temperature
Trwy
VR=17V, IR=5mA
200
-
-
Temperature Coefficient
T
IR=10mA
-
18
-
mV/
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
IF(AV)
35
A
Peak 1 Cycle Surge Current
IFSM
450 (50Hz)
A
Peak Reverse Surge Current
(IRSM/2=10ms)
IRSM
70
A
Peak Revese Over Voltage
VRSM
70
V
Peak Revese Voltage
VRM
17
V
Junction Temperature
Tj
-40 200
Storage Temperature Range
Tstg
-40 150


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