6.42

11

IDT71P72204 (2M x 8-Bit), 71P72104 (2M x 9-Bit), 71P72804 (1M x 18-Bit) 71P72604 (512K x 36-Bit)

Advance Information

18 Mb QDR II SRAM Burst of 2

Commercial Temperature Range

DC Electrical Characteristics Over the Operating Temperature and

Parameter

Symbol

Test Conditions

Min

Max

Unit

Note

Input Leakage Current

-10

+10

µA

Output Leakage Current

Output Disabled

-10

+10

µA

Operating Current

(x36,x18,x9,x8): DDR

-

TBD

mA

1

-

TBD

-

TBD

Standby Current: NOP

Device Deselected (in NOP state),

Iout = 0mA (outputs open),

f=Max,

All Inputs <0.2V or > VDD -0.2V

-

TBD

mA

2

-

TBD

-

TBD

Output High Voltage

RQ = 250

V

3,7

Output Low Voltage

RQ = 250

V

4,7

Output High Voltage

V

5

Output Low Voltage

0.2

V

6

6109 tbl 10c

NOTES:

1. Operating Current is measured at 100% bus utilization.

2. Standby Current is only after all pending read and write burst operations are completed.

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

impedance measurement point.

measurement point.

7. Programmable Impedance Mode.