Electronic Components Datasheet Search |
|
K4S64323LF-DG1H Datasheet(PDF) 8 Page - Samsung semiconductor |
|
K4S64323LF-DG1H Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 8 page K4S64323LF-S(D)G/S Rev. 1.5 Dec 2002 CMOS SDRAM SIMPLIFIED TRUTH TABLE(V=Valid, X=Don ′t Care, H=Logic High, L=Logic Low) Notes : 1. OP Code : Operand Code A0 ~ A 10 & BA0 ~ BA1 : Program keys. (@MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are the same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA 0 is "Low" and BA 1 is "High" at read, write, row active and precharge, bank B is selected. If BA 0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. If A 10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency is 0), but in read operation it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2). COMMAND CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10 /AP A9 ~ A 0 Note Register Mode Register Set H X L L L L X OP CODE 1, 2 Refresh Auto Refresh H H L L L H X X 3 Self Refresh Entry L 3 Exit L H L H H H X X 3 H X X X 3 Bank Active & Row Addr. H X L L H H X V Row Address Read & Column Address Auto Precharge Disable H X L H L H X V L Column Address (A0~A7) 4 Auto Precharge Enable H 4, 5 Write & Column Address Auto Precharge Disable H X L H L L X V L Column Address (A0~A7) 4 Auto Precharge Enable H 4, 5 Burst Stop H X L H H L X X 6 Precharge Bank Selection H X L L H L X V L X All Banks X H Clock Suspend or Active Power Down Entry H L H X X X X X L V V V Exit L H X X X X X Precharge Power Down Mode Entry H L H X X X X X L H H H Exit L H H X X X X L V V V DQM H X V X 7 No Operation Command H X H X X X X X L H H H |
Similar Part No. - K4S64323LF-DG1H |
|
Similar Description - K4S64323LF-DG1H |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |