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K4S64323LF-DN75-PB Datasheet(PDF) 5 Page - Samsung semiconductor |
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K4S64323LF-DN75-PB Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 8 page K4S64323LF-S(D)N/U/P Rev. 1.5 Dec 2002 CMOS SDRAM DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 °C to 85°C for Extended, -40°C to 85°C for Industrial) Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S64323LF-S(D)N/P** 4. K4S64323LF-S(D)U** 5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ). Parameter Symbol Test Condition Version Unit Note -75 -1H -1L -15 Operating Current (One Bank Active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 70 70 65 60 mA 1 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 0.5 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 0.5 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 10 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 7 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 5 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 5 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 20 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 20 mA Operating Current ICC4 IO = 0 mA ,Page burst 85 70 70 60 mA 1 Refresh Current ICC5 tRC ≥ tRC(min) 115 110 100 80 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V -S(D)N/P 350 uA 3 -S(D)U 230 4 |
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