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IRHQ58110 Datasheet(PDF) 1 Page - International Rectifier |
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IRHQ58110 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 08/01/01 www.irf.com 1 LCC-28 IRHQ57110 100V, Quad N-CHANNEL RAD-Hard ™ HEXFET ® TECHNOLOGY International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applica- tions. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combina- tion of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC con- verters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and tempera- ture stability of electrical parameters. Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight 4 4# Product Summary Part Number Radiation Level RDS(on) ID IRHQ57110 100K Rads (Si) 0.27 Ω 4.6A IRHQ53110 300K Rads (Si) 0.27 Ω 4.6A IRHQ54110 600K Rads (Si) 0.27 Ω 4.6A IRHQ58110 1000K Rads (Si) 0.29 Ω 4.6A Absolute Maximum Ratings (Per Die) Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 4.6 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 2.9 IDM Pulsed Drain Current ➀ 18.4 PD @ TC = 25°C Max. Power Dissipation 12 W Linear Derating Factor 0.1 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 47 mJ IAR Avalanche Current ➀ 4.6 A EAR Repetitive Avalanche Energy ➀ 1.2 mJ dv/dt Peak Diode Recovery dv/dt ➂ 6.1 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.89 (Typical) g oC A For footnotes refer to the last page Pre-Irradiation PD - 94211A |
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