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Q67040-S4387 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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Q67040-S4387 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 9 page 2003-07-31 Rev.2 Page 5 IDP18E120 IDB18E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 200 300 400 500 600 700 800 ns 1000 36A 18A 9A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 nC 4600 36A 9A 18A 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 5 10 15 20 A 30 36A 18A 9A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 2 4 6 8 10 12 14 18 36A 18A 9A |
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