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MC33153D Datasheet(PDF) 8 Page - ON Semiconductor |
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MC33153D Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 12 page MC33153 8 MOTOROLA ANALOG IC DEVICE DATA –60 10 1.0 80 5.0 10 TA, AMBIENT TEMPERATURE (°C) VCC = 15 V VPin 4 = VCC Drive Output Open f, INPUT FREQUENCY (kHz) VCC = 15 V TA = 25°C Figure 27. Supply Current versus Supply Voltage VCC, SUPPLY VOLTAGE (V) Figure 28. Supply Current versus Temperature Output High Figure 29. Supply Current versus Input Frequency Output Low TA = 25°C CL = 10 nF = 5.0 nF = 2.0 nF = 1.0 nF 8.0 6.0 4.0 2.0 0 20 40 60 80 100 120 140 20 –20 0 –40 10 15 8.0 6.0 4.0 2.0 0 1000 10 100 60 40 20 0 OPERATING DESCRIPTION GATE DRIVE Controlling Switching Times The most important design aspect of an IGBT gate drive is optimization of the switching characteristics. The switching characteristics are especially important in motor control applications in which PWM transistors are used in a bridge configuration. In these applications, the gate drive circuit components should be selected to optimize turn–on, turn–off and off–state impedance. A single resistor may be used to control both turn–on and turn–off as shown in Figure 30. However, the resistor value selected must be a compromise in turn–on abruptness and turn–off losses. Using a single resistor is normally suitable only for very low frequency PWM. An optimized gate drive output stage is shown in Figure 31. This circuit allows turn–on and turn–off to be optimized separately. The turn–on resistor, Ron, provides control over the IGBT turn–on speed. In motor control circuits, the resistor sets the turn–on di/dt that controls how fast the free–wheel diode is cleared. The interaction of the IGBT and free–wheeling diode determines the turn–on dv/dt. Excessive turn–on dv/dt is a common problem in half–bridge circuits. The turn–off resistor, Roff, controls the turn–off speed and ensures that the IGBT remains off under commutation stresses. Turn–off is critical to obtain low switching losses. While IGBTs exhibit a fixed minimum loss due to minority carrier recombination, a slow gate drive will dominate the turn–off losses. This is particularly true for fast IGBTs. It is also possible to turn–off an IGBT too fast. Excessive turn–off speed will result in large overshoot voltages. Normally, the turn–off resistor is a small fraction of the turn–on resistor. The MC33153 contains a bipolar totem pole output stage that is capable of sourcing 1.0 amp and sinking 2.0 amps peak. This output also contains a pull down resistor to ensure that the IGBT is off whenever there is insufficient VCC to the MC33153. In a PWM inverter, IGBTs are used in a half–bridge configuration. Thus, at least one device is always off. While the IGBT is in the off–state, it will be subjected to changes in voltage caused by the other devices. This is particularly a problem when the opposite transistor turns on. |
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