Device

Operating

Temperature Range

Package

MC33169

SEMICONDUCTOR

TECHNICAL DATA

GaAs POWER AMPLIFIER

SUPPORT IC

ORDERING INFORMATION

MC33169DTB–4.0 TA = –40° to +85°C TSSOP–14

DTB SUFFIX

PLASTIC PACKAGE

CASE 948G

(TSSOP–14)

14

1

PIN CONNECTIONS

Order this document by MC33169/D

VCC

Idle Mode Input

C2 Input

C1/C2

C1 Input

VO Output

VO Charge Pump

Capacitor+

Gnd

VO Charge Pump

Capacitor–

VBB Double

VBB Triple

Sense Input

Tx Power

Control Input

Gate Drive Output

(Top View)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1

MOTOROLA ANALOG IC DEVICE DATA

GaAs Power Amplifier

Support IC

The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs

used in hand–held telephones such as GSM and PCS. This device provides

negative voltages for full depletion of Enhanced MESFETs as well as a

priority management system of drain switching, ensuring that the negative

voltage is always present before turning “on” the Power Amplifier. Additional

features include an idle mode input and a direct drive of the N–Channel drain

switch transistor. This product is available in a 4.0 V version intended for

control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.

Simplified Block Diagram

VBB Double

C3

VCC

+–

C1

–+

C2

VBB

Triple

C4

+

–

Tx Power

Control

Input

Idle

Mode Input

Gnd

Cp

+

–

VO

Output

(– 4.0 V)

Ci

Rf

Cf

+

–

+

RF

In

RF

Out

+

VBattery

(2.7 to 7.0 V)

Gate Drive Output

Sense Input

VBB

Generator

(Voltage Tripler)

Priority

Management

Negative

Generator

Charge

Pump

Power Amplifier

Sense

MC33169

MMSF4N01HD

21

14

8

10

4

5

7

6

13

9

3

11

+

12

This device contains 148 active transistors.

© Motorola, Inc. 1998

Rev 2