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ISL6548ACRZ-T Datasheet(PDF) 11 Page - Intersil Corporation |
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ISL6548ACRZ-T Datasheet(HTML) 11 Page - Intersil Corporation |
11 / 16 page 11 FN9189.1 July 22, 2005 diagrams on page 4). An internal 20 µA (typical) current sink develops a voltage across ROCSET that is referenced to the converter input voltage. When the voltage across the upper MOSFET (also referenced to the converter input voltage) exceeds the voltage across ROCSET, the overcurrent function initiates a soft-start sequence. The initiation of soft-start may affect other regulators. The VTT_DDR regulator is directly affected as it receives its reference and input from VDDQ. The overcurrent function will trip at a peak inductor current (IPEAK) determined by: where IOCSET is the internal OCSET current source (20µA typical). The OC trip point varies mainly due to the MOSFET rDS(ON) variations. To avoid overcurrent tripping in the normal operating load range, find the ROCSET resistor from the equation above with: 1. The maximum rDS(ON) at the highest junction temperature. 2. The minimum IOCSET from the specification table. 3. Determine IPEAK for , where ∆I is the output inductor ripple current. For an equation for the ripple current see the section under component guidelines titled ‘Output Inductor Selection’. A small ceramic capacitor should be placed in parallel with ROCSET to smooth the voltage across ROCSET in the presence of switching noise on the input voltage. Thermal Protection (S0/S3 State) If the ISL6548A IC junction temperature reaches a nominal temperature of 140°C, all regulators will be disabled. The ISL6548A will not re-enable the outputs until the junction temperature drops below 110°C and either the bias voltage is toggled in order to initiate a POR or the SLP_S5 signal is forced LOW and then back to HIGH. Shoot-Through Protection A shoot-through condition occurs when both the upper and lower MOSFETs are turned on simultaneously, effectively shorting the input voltage to ground. To protect from a shoot- through condition, the ISL6548A incorporates specialized circuitry on the VDDQ regulator which insures that complementary MOSFETs are not ON simultaneously. The adaptive shoot-through protection utilized by the VDDQ regulator looks at the lower gate drive pin, LGATE, and the upper gate drive pin, UGATE, to determine whether a MOSFET is ON or OFF. If the voltage from UGATE or from LGATE to GND is less than 0.8V, then the respective MOSFET is defined as being OFF and the other MOSFET is allowed to turned ON. This method allows the VDDQ regulator to both source and sink current. Since the voltage of the MOSFET gates are being measured to determine the state of the MOSFET, the designer is encouraged to consider the repercussions of introducing external components between the gate drivers and their respective MOSFET gates before actually implementing such measures. Doing so may interfere with the shoot- through protection. Application Guidelines Layout Considerations Layout is very important in high frequency switching converter design. With power devices switching efficiently at 250kHz, the resulting current transitions from one device to another cause voltage spikes across the interconnecting impedances and parasitic circuit elements. These voltage spikes can degrade efficiency, radiate noise into the circuit, and lead to device overvoltage stress. Careful component layout and printed circuit board design minimizes these voltage spikes. As an example, consider the turn-off transition of the control MOSFET. Prior to turn-off, the MOSFET is carrying the full load current. During turn-off, current stops flowing in the MOSFET and is picked up by the lower MOSFET. Any parasitic inductance in the switched current path generates a large voltage spike during the switching interval. Careful component selection, tight layout of the critical components, and short, wide traces minimizes the magnitude of voltage spikes. There are two sets of critical components in the ISL6548A switching converter. The switching components are the most critical because they switch large amounts of energy, and therefore tend to generate large amounts of noise. Next are the small signal components which connect to sensitive nodes or supply critical bypass current and signal coupling. A multi-layer printed circuit board is recommended. Figure 2 shows the connections of the critical components in the converter. Note that capacitors CIN and COUT could each represent numerous physical capacitors. Dedicate one solid layer, usually a middle layer of the PC board, for a ground plane and make all critical component ground connections with vias to this layer. Dedicate another solid layer as a power plane and break this plane into smaller islands of common voltage levels. Keep the metal runs from the PHASE terminals to the output inductor short. The power plane should support the input power and output power nodes. Use copper filled polygons on the top and bottom circuit layers for the phase nodes. Use the remaining printed circuit layers for small signal wiring. The wiring traces from the GATE pins to the MOSFET gates should be kept short and wide enough to easily handle the 1A of drive current. In order to dissipate heat generated by the internal VTT LDO, the ground pad, pin 29, should be connected to the internal ground plane through at least four vias. This allows IPEAK IOCSET x ROCSET rDS ON () ----------------------------------------------------- = IPEAK IOUT MAX () ∆I () 2 ---------- + > ISL6548A |
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