MC33363

3

MOTOROLA ANALOG IC DEVICE DATA

for min/max values TJ is the operating junction temperature range that applies (Note 2), unless otherwise noted.)

Characteristic

Unit

Max

Typ

Min

Symbol

ERROR AMPLIFIER (Pins 9, 10)

Output Voltage Swing

High State (ISource = 100 µA, VFB < 2.0 V)

Low State (ISink = 100 µA, VFB > 3.0 V)

VOH

VOL

4.0

–

5.3

0.2

–

0.35

V

OVERVOLTAGE DETECTION (Pin 11)

Input Threshold Voltage

Vth

2.47

2.6

2.73

V

Input Bias Current (Vin = 2.6 V)

IIB

–

100

500

nA

PWM COMPARATOR (Pins 7, 9)

Duty Cycle

Maximum (VFB = 0 V)

Minimum (VFB = 2.7 V)

DC(max)

DC(min)

48

–

50

0

52

0

%

POWER SWITCH (Pin 16)

Drain–Source On–State Resistance (ID = 200 mA)

TJ = 25°C

TJ = Tlow to Thigh

RDS(on)

–

–

14

–

17

32

Ω

Drain–Source Off–State Leakage Current (VDS = 700 V)

ID(off)

–

0.2

50

µA

Rise Time

tr

–

50

–

ns

Fall Time

tf

–

50

–

ns

OVERCURRENT COMPARATOR (Pin 16)

Current Limit Threshold (RT = 10 k)

Ilim

0.5

0.72

0.9

A

STARTUP CONTROL (Pin 1)

Peak Startup Current (Vin = 400 V)

VCC = 0 V

VCC = (Vth(on) – 0.2 V)

Istart

–

–

20

6.0

–

–

mA

Off–State Leakage Current (Vin = 50 V, VCC = 20 V)

ID(off)

–

40

200

µA

UNDERVOLTAGE LOCKOUT (Pin 3)

Startup Threshold (VCC Increasing)

Vth(on)

11

15.2

18

V

Minimum Operating Voltage After Turn–On

VCC(min)

7.5

9.5

11.5

V

TOTAL DEVICE (Pin 3)

Power Supply Current

Startup (VCC = 10 V, Pin 1 Open)

Operating

ICC

–

–

0.25

3.2

0.5

5.0

mA

RT, TIMING RESISTOR (kΩ)

1.0

7.0

1.0 M

VCC = 20 V

CT = 1.0 µF

TA = 25°C

Figure 1. Oscillator Frequency

versus Timing Resistor

RT, TIMING RESISTOR (kΩ)

Figure 2. Power Switch Peak Drain Current

versus Timing Resistor

500 k

200 k

100 k

50 k

20 k

10 k

0.8

0.6

0.4

0.2

0.1

10

15

20

30

50

7.0

10

15

20

30

40

70

VCC = 20 V

TA = 25°C

CT = 100 pF

CT = 200 pF

CT = 500 pF

CT = 1.0 nF

CT = 2.0 nF

CT = 5.0 nF

CT = 10 nF

Inductor supply voltage and inductance value are

adjusted so that Ipk turn–off is achieved at 5.0 µs.

70

50