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KSK30R Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSK30R Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 Silicon N-channel Junction Fet Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted IDSS Classification Symbol Parameter Ratings Units VGDS Gate-Drain Voltage -50 V IG Gate-Current 10 mA PD Collector Dissipation 100 mW TJ Junction Temperature 125 °C TSTG Storage Temperature -55 ~ 125 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVGDS Gate-Drain Breakdown Voltage VDS=0, IG= -100µA-50 V IGSS Gate Leak Current VGS= -30V, VDS=0 -1 nA IDSS Drain Leak Current VDS=10V, VGS=0 0.3 6.5 mA VGS (off) Gate-Source Voltage VDS=10V, ID=0.1µA -0.4 -5 V Y FS Forward Transfer Admittance VDS=10V, VGS=0, f=1KHz 1.2 mS Ciss Input Capacitance VDS=0, VGS=0, f=1MHz 8.2 pF Crss Feedback Capacitance VGD=10V, VDS=0 f=1MHz 2.6 pF NF Noise Figure VDS=15V, VGS=0 RG=100KΩ f=120Hz 0.5 5 dB Classification R O Y G IDSS(mA) 0.30 ~ 0.75 0.60 ~ 1.40 1.20 ~ 3.00 2.60 ~ 6.50 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA (MAX) • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V 1. Source 2. Gate 3. Drain TO-92 1 |
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