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M5M5V416BRT Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M5M5V416BRT Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 11 page M ITSUBISHI ELECTRIC M5M5V416BTP,RT revision-P04, ' 98.12.16 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI LSIs PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change DESCRIPTION FEATURES The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm CMOS technology. The M5M5V416B is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small outline package. M5M5V416BTP (normal lead bend ty pe package) , M5M5V416BRT (rev erse lead bend ty pe package) , both ty pes are v ery easy t o design a printed circuit board. From the point of operating temperature, the f amily is div ided into three v ersions; "Standard", "W-v ersion", and "I-v ersion". Those are summarized in the part name table below. Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty p.) No clocks, No ref resh Data retention supply v oltage=2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology: 0.25µm CMOS Package: 44 pin 400mil TSOP (II) PIN CONFIGURATION * "ty pical" parameter is sampled, not 100% tested. Outline: 44P3W-H/J NC: No Connection A0 ~ A17 DQ1 ~ DQ16 S1 W OE BC1 Address input Data input / output Chip select input 1 Write control input Output enable input Lower By te (DQ1 ~ 8) Pin Function Vcc GND Power supply Ground supply BC2 Upper By te (DQ9 ~ 16) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A4 A3 S1 DQ1 Vcc GND WE A2 A1 A0 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 A15 A14 A13 A12 A16 BC1 OE BC2 A5 S2 A8 A9 A10 A11 DQ9 DQ10 DQ11 DQ12 Vcc GND DQ13 DQ14 DQ15 DQ16 A6 A7 A17 BC1 OE A4 A3 BC2 S1 A5 DQ1 S2 Vcc GND WE A8 A9 A10 A11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A2 A1 A0 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 A15 A14 A13 A12 A16 DQ9 DQ10 DQ11 DQ12 Vcc GND DQ13 DQ14 DQ15 DQ16 A6 A7 A17 S2 Chip select input 2 85ns 100ns 70ns 100ns 100ns 100ns 70ns 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V --- --- --- 0.3µA 0.3µA 0.3µA --- 1µA 1µA 3µA 1µA 3µA --- --- --- 1µA 1µA 1µA --- --- 20µA 10µA 20µA 10µA 40µA 20µA 20µA 10µA 40µA 20µA --- --- --- --- --- 3µA 40mA (10MHz) 5mA (1MHz) 85ns 100ns 85ns 70ns 85ns 85ns 100ns 85ns 70ns 70ns 70ns M5M5V416BTP , RT -85L M5M5V416BTP , RT -70L M5M5V416BTP , RT -10L M5M5V416BTP , RT -70H M5M5V416BTP , RT -85H M5M5V416BTP , RT -10H M5M5V416BTP , RT -85LW M5M5V416BTP , RT -70LW M5M5V416BTP , RT -10LW M5M5V416BTP , RT -85HW M5M5V416BTP , RT -70HW M5M5V416BTP , RT -10HW M5M5V416BTP , RT -85LI M5M5V416BTP , RT -70LI M5M5V416BTP , RT -10LI M5M5V416BTP , RT -85HI M5M5V416BTP , RT -70HI M5M5V416BTP , RT -10HI Version, Operating temperature Standard 0 ~ +70°C W-v ersion -20 ~ +85°C I-v ersion -40 ~ +85°C Part name Power Supply Access time max. Stand-by c urrent Icc(PD), Vcc=3.0V ty pical * Ratings (max.) Active current (3.0V, ty p.) Icc1 70°C 85°C 25°C 25°C 40°C 40°C 1 44P3W-H 44P3W-J |
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