NTHD4508N datasheet(2/6 Pages) ONSEMI

Part #	NTHD4508N

Description	Power MOSFET 20 V, 4.1 A, Dual N?묬hannel ChipFET

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NTHD4508N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V

20

V

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 16 V

1.0

mA

VGS = 0 V, VDS = 16 V, TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.6

1.2

V

Drain−to−Source On−Resistance

RDS(on)

VGS = 4.5, ID = 3.1 A

60

75

m

W

()

VGS = 2.5, ID = 2.3 A

80

115

Forward Transconductance

gFS

VDS = 10 V, ID = 3.1 A

6.0

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

V

0V f

10MH

180

pF

Output Capacitance

COSS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

80

Reverse Transfer Capacitance

CRSS

VDS = 10 V

25

Total Gate Charge

QG(TOT)

2.6

4.0

nC

Threshold Gate Charge

QG(TH)

VGS = 4.5 V, VDS = 10 V,

0.5

Gate−to−Source Charge

QGS

VGS = 4.5 V, VDS = 10 V,

ID = 3.1 A

0.6

Gate−to−Drain Charge

QGD

0.7

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

5.0

10

ns

Rise Time

tr

VGS = 4.5 V, VDS = 16 V,

15

30

Turn−Off Delay Time

td(OFF)

VGS = 4.5 V, VDS = 16 V,

ID = 3.1 A, RG = 2.5 W

10

20

Fall Time

tf

3.0

6.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 3.1 A

0.75

1.15

V

Reverse Recovery Time

tRR

12.5

ns

Charge Time

ta

VGS = 0 V, IS = 1.5 A,

9.0

Discharge Time

tb

VGS = 0 V, IS = 1.5 A,

dIS/dt = 100 A/ms

3.5

Reverse Recovery Charge

QRR

6.0

nC

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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