SI7991DP datasheet(3/5 Pages) VISHAY

Part #	SI7991DP

Description	Dual P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7991DP

Vishay Siliconix

New Product

Document Number: 72515

S-32127—Rev. B, 27-Oct-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

500

1000

1500

2000

2500

3000

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

0.00

0.01

0.02

0.03

0.04

0.05

0

6

12

18

24

30

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 10 A

ID − Drain Current (A)

VGS = 10 V

ID = 10 A

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0.10

0

2468

10

TJ = 25_C

ID = 10 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

TJ = 150_C

VGS = 10 V

ID = 5 A

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