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HZS11LB1 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HZS11LB1
Description  Silicon Epitaxial Planar Zener Diode for Low Noise Application
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HZS11LB1 Datasheet(HTML) 2 Page - Renesas Technology Corp

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HZS-L Series
Rev.2.00, Jan.06.2003, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V)*
1
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZS6L
A1
5.2
5.5
0.5
1
2.0
150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
HZS7L
A1
6.3
6.6
0.5
1
3.5
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
Note:
1. Tested with DC.


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