Two-Switch Power ICs with Integrated

Power MOSFETs and Hot-Swap Controller

_______________________________________________________________________________________

5

ELECTRICAL CHARACTERISTICS (continued)

unless otherwise noted.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

High-to-Low Latency

45

ns

CURRENT-SENSE COMPARATOR

Current-Limit-Comparator

Threshold Voltage

140

156

172

mV

Current-Limit-Comparator

Propagation Delay

10mV overdrive

40

ns

CURRENT-SENSE AMPLIFIER

Current Amplifier Gain

9.75

10

10.25

V/V

Input Voltage Offset

185

200

230

mV

Input Common-Mode Range

-0.3

+0.3

V

Input Differential-Mode Range

Inferred from current amplifier gain test

0.35

V

CSP Input Bias Current

-160

-40

µA

CSN Input Bias Current

-160

-30

µA

Settling Time

70

ns

3dB Bandwidth

7MHz

BOOST VOLTAGE CIRCUIT

Sinking 100mA

10

20

Ω

Driver Output Delay

200

ns

One-Shot Pulse Width

300

ns

THERMAL SHUTDOWN

Shutdown Temperature

Temperature rising

150

°C

Thermal Hysteresis

14.5

°C

PWM CONVERTER UNDERVOLTAGE LOCKOUT (UVLO)

Preset UVLO Threshold

Measured at POSINPWM rising

28

31

34

V

UVLO Threshold Hysteresis

3V

UVLO Resistance

Looking into UVLO

30

75

k

Ω

UVLO Trip Point

Measured at UVLO rising

1.15

1.27

1.39

V

UVLO Hysteresis

+127

mV

Preset DEN Threshold

MAX5043 only, measured at POSINPWM

rising

27

34

V

DEN Threshold Hysteresis

MAX5043 only

3.1

V

DEN Startup Delay

MAX5043 only

3.5

12

27.0

ms

DEN Turn-Off Delay

MAX5043 only

0.2

0.7

1.5

ms

DEN Trip Point

MAX5043 only, rising with respect to

PWMNEG

1.11

1.35

V