2

Supply Voltage between VSD and GND . . . . . . . . . . . . . . . . . . TBD

Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . . TBD

Ambient Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . TBD

Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests

Electrical Specifications

PARAMETER

DESCRIPTION

CONDITION

MIN

TYP

MAX

UNIT

GAMMA BUFFER INPUT CHARACTERISTICS

Input Offset Voltage

2

14

mV

Average Offset Voltage Drift

(Note 1)

5

µV/°C

Input Bias Current

2

50

nA

Input Impedance

1G

Ω

Input Capacitance

2pF

Voltage Gain

0.5

0.995

1.005

V/V

GAMMA BUFFER OUTPUT CHARACTERISTICS

Output Swing Low

80

150

mV

Output Swing High

14.85

14.92

V

Short Circuit Current

Short to GND (Note 2)

±80

±120

mA

GAMMA BUFFER DYNAMIC PERFORMANCE

SR

Slew Rate (Note 3)

1V

710

V/µs

Settling to +0.1%

500

ns

BW

-3dB Bandwidth

12

MHz

CS

Channel Separation

f = 5MHz

75

dB

Input Offset Voltage

3

15

mV

Average Offset Voltage Drift (Note 4)

7

µV/°C

Input Bias Current

2

60

nA

Input Impedance

1G

Ω

Input Capacitance

2pF

CMIR

Common-Mode Input Range

-0.5

+15.5

V

CMRR

Common-Mode Rejection Ratio

53

72

dB

Open-Loop Gain

0.5V

62

70

dB

Output Swing Low

80

150

mV

Output Swing High

14.85

14.92

V

Short-circuit Current

±180

mA

Output Current

±65

mA

EL5228