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FDAF69N25 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDAF69N25 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FDAF69N25 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.64mH, IAS = 69A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 34A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDAF69N25 FDAF69N25 TO-3PF -- -- 30 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.25 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 17A -- 0.034 0.041 Ω gFS Forward Transconductance VDS = 40V, ID = 17A (Note 4) -- 25 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3570 4640 pF Coss Output Capacitance -- 750 980 pF Crss Reverse Transfer Capacitance -- 84 130 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125V, ID = 69A RG = 25Ω (Note 4, 5) -- 95 200 ns tr Turn-On Rise Time -- 855 1720 ns td(off) Turn-Off Delay Time -- 130 270 ns tf Turn-Off Fall Time -- 220 450 ns Qg Total Gate Charge VDS = 200V, ID = 69A VGS = 10V (Note 4, 5) -- 77 100 nC Qgs Gate-Source Charge -- 24 -- nC Qgd Gate-Drain Charge -- 37 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 34A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 69A dIF/dt =100A/µs (Note 4) -- 210 -- ns Qrr Reverse Recovery Charge -- 5.7 -- µC |
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