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M5M5V4R08J-12 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # M5M5V4R08J-12
Description  4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M5V4R08J-12 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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M5M5V4R08J-12,-15,-20
MITSUBISHI LSIs
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
1
Outline
36P0K (SOJ)
PRELIMINARY
data
inputs/
outputs
data
inputs/
outputs
data
inputs/
outputs
data inputs/
outputs
write control
input
chip select
input
output enable
input
PIN CONFIGURATION (TOP VIEW)
Notice: This is not a final specification.
Some parametric limits are subject to change
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A3
A2
A1
A0
DQ1
36
35
34
33
32
31
30
29
28
27
26
25
24
23
OE
S
DQ5
DQ7
DQ6
A4
W
A9
A8
A7
A6
A5
DQ2
DQ3
DQ4
DQ8
22
21
GND
GND
1997.02.06 Rev.D
DESCRIPTION
The M5M5V4R08J is a family of 524288-word by 8-bit static
RAMs, fabricated with the high performance CMOS silicon
gate process and designed for high speed application.
The M5M5V4R08J is offered in a 36-pin plastic small outline
J-lead package(SOJ).
These device operate on a single 3.3V supply, and are directly
TTL compatible. They include a power down feature as well.
APPLICATION
High-speed memory units
FEATURES
address
inputs
address
inputs
address
inputs
address
inputs
VCC
VCC
(0V)
(0V)
(3.3V)
(3.3V)
COLUMN
ADDRESS
DECODERS
A16
A15
A14
A13
A12
A11
A10
A9
20 21 22 23 24
18
32 33
A5
A8
A7
A6
A4
A3
A2
A1
A0
1
2
3
4
5
14
15
16
17
S
6
OE 31
W
13
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
7
8
11
12
25
26
29
30
COLUMN I/O CIRCUITS
COLUMN INPUT BUFFERS
VCC
27
GND
10
9
28
MEMORY ARRAY
512 ROWS
8192 COLUMNS
COLUMN ADDRESS
DECODERS
(3.3V)
(0V)
BLOCK DIAGRAM
address
inputs
address inputs
data
inputs/
outputs
PACKAGE
36pin 400mil SOJ
17
18
A18
NC
A17
A16
A15
A12
A10
A11
A14
A13
20
19
NC
A17
A16
34 35
• Fast access time
M5M5V4R08J-12 •••• 12ns(max)
M5M5V4R08J-15 •••• 15ns(max)
M5M5V4R08J-20 •••• 20ns(max)
• Low power dissipation
Active •••••••••• 363mW(typ)
Stand by ••••••• 3.3mW(typ)
• Single +3.3V power supply
• Fully static operation : No clocks, No refresh
• Common data I/O
• Easy memory expansion by S
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Directly TTL compatible : All inputs and outputs


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