K4H511638D datasheet(5/24 Pages) SAMSUNG

Part #	K4H511638D

Description	512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 24 page

Rev. 0.3 June. 2005

DDR SDRAM

DDR SDRAM 512Mb D-die (x8, x16)

Preliminary

DM is internally loaded to match DQ and DQS identically.

Row & Column address configuration

Organization

Row Address

Column Address

64Mx8

A0~A12

A0-A9, A11

32Mx16

A0~A12

A0-A9

4.0 Pin Description

512Mb TSOP-II Package Pinout

VDD

1

66Pin TSOPII

(400mil x 875mil)

DQ0

2

VDDQ

3

NC

4

DQ1

5

VSSQ

6

NC

7

DQ2

8

VDDQ

9

NC

10

DQ3

11

VSSQ

12

BA0

20

CS

19

RAS

18

CAS

17

WE

16

NC

15

VDDQ

14

NC

13

VDD

27

A3

26

A2

25

A1

24

A0

23

AP/A10

22

BA1

21

VSS

54

DQ7

53

VSSQ

52

NC

51

DQ6

50

VDDQ

49

NC

48

DQ5

47

VSSQ

46

NC

45

DQ4

44

VDDQ

43

A11

35

36

CKE

37

CK

38

DM

39

VREF

40

VSSQ

41

NC

42

VSS

55

A4

56

A5

57

A6

58

A7

59

A8

60

A9

34

(0.65mm Pin Pitch)

33

32

31

30

29

28

61

62

63

64

65

66

NC

VDD

NC

DQS

NC

VSS

CK

NC

A12

Bank Address

BA0~BA1

Auto Precharge

A10

32Mb x 16

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

BA0

CS

RAS

CAS

WE

LDM

VDDQ

DQ7

VDD

A3

A2

A1

A0

AP/A10

BA1

NC

LDQS

NC

VDD

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

A11

CKE

CK

UDM

VREF

VSSQ

DQ8

VSS

A4

A5

A6

A7

A8

A9

NC

UDQS

NC

VSS

CK

NC

A12

64Mb x 8

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K4H511638D Datasheet(PDF) 5 Page - Samsung semiconductor

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