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ZXMC6A09DN8TC Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMC6A09DN8TC Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 10 page ZXMC6A09DN8 ISSUE 3 - AUGUST 2004 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS 60 V ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS 1.0 AVDS=60V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS= 20V, VDS=0V Gate-Source Threshold Voltage VGS(th) 1.0 V I D =250 A, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.045 0.070 VGS=10V, ID=8.2A VGS=4.5V, ID=7.4A Forward Transconductance (1)(3) gfs 15 S VDS=15V,ID=8.2A DYNAMIC (3) Input Capacitance Ciss 1407 pF VDS=40V, VGS=0V, f=1MHz Output Capacitance Coss 121 pF Reverse Transfer Capacitance Crss 59 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 4.9 ns VDD =30V, ID=1.0A RG 6.0Ω,VGS=10V Rise Time tr 3.3 ns Turn-Off Delay Time td(off) 28.5 ns Fall Time tf 11.0 ns Gate Charge Qg 12.4 nC VDS=15V,VGS=5V, ID=3.5A Total Gate Charge Qg 24.2 nC VDS=15V,VGS=10V, ID=3.5A Gate-Source Charge Qgs 5.2 nC Gate-Drain Charge Qgd 3.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=6.6A, VGS=0V Reverse Recovery Time (3) trr 26.3 ns TJ=25°C, IF=3.5A, di/dt= 100A/ s Reverse Recovery Charge (3) Qrr 26.6 nC N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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