ZXMC6A09DN8

ISSUE 3 - AUGUST 2004

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

STATIC

Drain-Source Breakdown Voltage

60

V

Zero Gate Voltage Drain Current

1.0

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

1.0

V

I

D

Static Drain-Source On-State Resistance

(1)

0.045

0.070

Forward Transconductance

(1)(3)

15

S

DYNAMIC

(3)

Input Capacitance

1407

pF

f=1MHz

Output Capacitance

121

pF

Reverse Transfer Capacitance

59

pF

SWITCHING

(2) (3)

Turn-On Delay Time

4.9

ns

Rise Time

3.3

ns

Turn-Off Delay Time

28.5

ns

Fall Time

11.0

ns

Gate Charge

12.4

nC

Total Gate Charge

24.2

nC

Gate-Source Charge

5.2

nC

Gate-Drain Charge

3.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.85

0.95

V

Reverse Recovery Time

(3)

26.3

ns

di/dt= 100A/ s

Reverse Recovery Charge

(3)

26.6

nC

N-CHANNEL

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.