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MT6L58AE Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MT6L58AE Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page  MT6L58AE 2003-07-31 2 Electrical Characteristics Q1 (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 1 µA DC current gain hFE VCE = 1 V, IC = 5 mA 70 140 Transition frequency fT VCE = 3 V, IC = 5 mA 7 10 GHz S21e 2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7.5 Insertion gain S21e 2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 4.5 8 dB NF (1) VCE = 1 V, IC = 3 mA, f = 2 GHz 1.7 3 Noise figure NF (2) VCE = 3 V, IC = 3 mA, f = 2 GHz 1.6 3 dB Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz (Note 2) 0.35 0.75 pF Note 2: Cre is measured by 3 terminal method with capacitance bridge. Electrical Characteristics Q2 (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 0.1 µA Emitter cut-off current IEBO VEB = 1 V, IC = 0 1 µA DC current gain hFE VCE = 1 V, IC = 5 mA 80 160 fT (1) VCE = 1 V, IC = 5 mA 5 7 Transition frequency fT (2) VCE = 3 V, IC = 10 mA 7 10 GHz S21e 2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 5 Insertion gain S21e 2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz 3 6.5 dB NF (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 1.7 3 Noise figure NF (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 1.4 2.2 dB Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz (Note 2) 0.8 1.15 pF Note 2: Cre is measured by 3 terminal method with capacitance bridge. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. |
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