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FDPF55N06 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDPF55N06 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP55N06/FDPF55N06 Rev. A UniFET TM FDP55N06/FDPF55N06 60V N-Channel MOSFET Features • 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 60 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TO-220 FDP Series G S D TO-220F FDPF Series G S D D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP55N06 FDPF55N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 55 55 * A - Continuous (TC = 100°C) 34.8 34.8 * A IDM Drain Current - Pulsed (Note 1) 220 220 * A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ IAR Avalanche Current (Note 1) 55 A EAR Repetitive Avalanche Energy (Note 1) 11.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 114 48 W - Derate above 25°C 0.9 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 ∀ from case for 5 seconds 300 °C Symbol Parameter FDP55N06 FDPF55N06 Units RθJC Thermal Resistance, Junction-to-Case 1.1 2.58 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W |
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