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PHP83N06T Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHP83N06T Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page Philips Semiconductors PHP83N06T TrenchMOS™ Standard Level FET Product data Rev. 01 — 11 January 2002 8 of 13 9397 750 09122 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. VGS =0V Tj =25 °C; ID =25A Fig 12. Reverse diode current as a function of reverse diode voltage; typical values. Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values. 03ag70 0 20 40 60 80 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC 175 ºC VGS = 0 V 03ag72 0 2 4 6 8 10 0 2040 6080 QG (nC) VGS (V) ID = 25 A Tj = 25 ºC VDD = 14 V 44 V |
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