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M5M5V416BWG-10LW Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

Part # M5M5V416BWG-10LW
Description  4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M5V416BWG-10LW Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

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M ITSUBISHI ELECTRIC
M5M5V416BWG
revision-W03, ' 98.12.16
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
6
Note 3: Hatching indicates the state is "don't care".
Note 4: A Write occurs during S1 low, S2 high ov erlaps BC1 and/or BC2 low and W low.
Note 6: Don't apply inv erted phase signal externally when DQ pin is in output mode.
Note 5: When the f alling edge of W is simultaneously or prior to the f alling edge of BC1 and/or BC2 or the f alling edge of S1
th (D)
tsu (D)
DQ1~16
tsu (BC1) or
tsu (BC2)
trec (W)
tsu (A)
tCW
A0~17
W
Write cycle (BC control mode)
DATA IN
STABLE
(Note3)
(Note3)
(Note4)
(Note5)
(Note3)
(Note3)
S1
or rising edge of S2, the outputs are maintained in the high impedance state.
BC1 ,BC2
(Note3)
(Note3)
S2


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