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M5M5V416BWG-10LW Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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M5M5V416BWG-10LW Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 10 page M ITSUBISHI ELECTRIC M5M5V416BWG revision-W03, ' 98.12.16 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI LSIs PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 6 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S1 low, S2 high ov erlaps BC1 and/or BC2 low and W low. Note 6: Don't apply inv erted phase signal externally when DQ pin is in output mode. Note 5: When the f alling edge of W is simultaneously or prior to the f alling edge of BC1 and/or BC2 or the f alling edge of S1 th (D) tsu (D) DQ1~16 tsu (BC1) or tsu (BC2) trec (W) tsu (A) tCW A0~17 W Write cycle (BC control mode) DATA IN STABLE (Note3) (Note3) (Note4) (Note5) (Note3) (Note3) S1 or rising edge of S2, the outputs are maintained in the high impedance state. BC1 ,BC2 (Note3) (Note3) S2 |
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