FJD5304DTF datasheet(2/6 Pages) FAIRCHILD

Part #	FJD5304DTF

Description	High Voltage Fast Switching Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FJD5304D Rev. A

Electrical Characteristics T

C = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min.

Typ.

Max

Units

BVCBO

Collector-Base Breakdown Voltage

IC = 1mA, IE = 0

700

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 5mA, IB = 0

400

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

12

V

ICES

Collector Cut-off Current

VCB = 700V, IE = 0

100

µA

ICEO

Collector Cut-off Current

VCB = 400V, IB = 0

250

µA

IEBO

Emitter Cut-off Current

VEB = 12V, IC = 0

1

mA

hFE

DC Current Gain

VCE = 5V, IC = 10mA

VCE = 5V, IC = 2.0A

10

840

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 0.5A, IB = 0.1A

0.7

V

IC = 1.0A, IB = 0.2A

1.0

V

IC = 2.5A, IB = 0.5A

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 0.5A, IB = 0.1A

1.1

V

IC = 1.0A, IB = 0.2A

1.2

V

IC = 2.5A, IB = 0.5A

1.3

V

tSTG

Storage Time

VCLAMP=200V, IC=2.0A

IB1=0.4A, VBE(off)=-5V, L=200µH

0.6

µs

tF

Fall Time

0.1

µs

tSTG

Storage Time

VCC=250V, IC=2.0A

IB1=0.4A, IB2=-0.4A, TP=30µs

2.9

µs

tF

Fall Time

0.2

µs

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