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BQ20Z80DBTR-V101 Datasheet(PDF) 5 Page - Texas Instruments |
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BQ20Z80DBTR-V101 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 73 page  www.ti.com PLL SWITCHING CHARACTERISTICS OSCILLATOR DATA FLASH MEMORY CHARACTERISTICS REGISTER BACKUP bq20z80-V101 SLUS625D – SEPTEMBER 2004 – REVISED OCTOBER 2005 V DD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t(SP) Start-up time (1) 0.5% frequency error 2 5 ms (1) The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally 4.194 MHz. V DD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ROSC = 100 k Ω –2% 0.25% 2% f(exo) Frequency error from 32.768 kHz ROSC = 100 k Ω, V DD = 3.3 V –1% 0.25% 1% XCK1 = 12-pF XTAL –0.25% 0.25% f(sxo) Start-up time (1) ROSC = 100 k Ω 250 µs XCK1 = 12-pF XTAL 200 ms (1) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency. V DD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tDR Data retention (1)10 Years Flash programming write-cycles (1) 20,000 Cycles t(WORDPROG) Word programming time (1) 2 ms I(DDPROG) Flash-write supply current (1) 8 15 mA (1) Assured by design. Not production tested V DD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I(RBI) RBI data-retention input current V(RBI) > 3 V, VDD < VIT 10 100 nA V(RBI) RBI data-retention voltage(1) 1.3 V (1) Specified by design. Not production tested. 5 |
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