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M5M5V416BWG-10HW Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M5M5V416BWG-10HW Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 10 page M ITSUBISHI ELECTRIC M5M5V416BWG revision-W03, ' 98.12.16 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI LSIs PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change S2 (Note3) (Note3) tsu (S2) ten (W) 5 ta(A) ta(BC1) tv (A) tdis (BC1) or tdis (BC1) ta (OE) ten (OE) tdis (OE) tCR th (D) tsu (D) DQ1~16 tsu (BC1) or tsu(BC2) ten(OE) tdis(OE) tw (W) trec (W) tsu (A) tdis (W) tCW ten (S1) W = "H" lev el A0~17 DQ1~16 A0~17 OE OE W (4)TIMING DIAGRAMS Read cycle (Note3) (Note3) (Note3) (Note3) VALID DATA Write cycle ( W control mode ) DATA IN STABLE (Note3) (Note3) ta(S1) tdis (S1) S1 (Note3) (Note3) BC1 ,BC2 ta(BC2) or ten (BC2) ten (BC1) tsu (A-WH) S1 (Note3) (Note3) tsu (S1) BC1,BC2 ta(S2) tdis (S2) S2 (Note3) (Note3) ten (S2) |
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