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STX790A Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STX790A
Description  MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
44.6
139
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 100
oC
-0.1
-10
µA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -4 V
-1
µA
V(BR)CER
∗ Collector-Emitter
Breakdown Voltage
(RBE = 47
Ω)
IC = -10 mA
-60
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = -100
µA
-60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -100
µA
-5
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -0.5A
IB = -5mA
IC = -1A
IB = -10mA
IC = -2A
IB = -20mA
IC = -3A
IB = -30mA
IC = -3A
IB = -30mA Tj = 100
o C
-0.15
-0.3
-0.5
-0.7
-0.9
V
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -1 A
IB = -10 mA
-0.8
-1.0
V
VBE(on)
Base-Emitter Turn-On
Voltage
IC = -1 A
VCE = -2 V
-0.8
-1
V
hFE
DC Current Gain
IC = -10 mA
VCE = -2 V
IC = -500 mA
VCE = -2 V
IC = -1 A
VCE = -2 V
IC = -2 A
VCE = -1 V
IC = -3 A
VCE = -1V
100
100
100
100
90
200
200
160
130
300
300
fT
Transition Frequency
IC = -50 mA
VCE = -5V f = 50MHz
100
MHz
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
IC = -3 A
IB1 = - IB2 = -60 mA
VCC = -20 V
(see figure 1)
180
160
250
80
220
210
300
100
ns
ns
ns
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
STX790A
2/6




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